WIAS Preprint No. 552, (2000)

Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals


Authors

  • Klein, Olaf
    ORCID: 0000-0002-4142-3603
  • Philip, Peter
  • Sprekels, Jürgen
    ORCID: 0009-0000-0618-8604
  • Wilmański, Krzysztof

2010 Mathematics Subject Classification

  • 80A20 65M99 35K55 65C20 80A15

Keywords

  • Modeling, sublimation growth, SiC single crystal, heat transfer, radiation, convection, numerical simulation, partial differential equations

DOI

10.20347/WIAS.PREPRINT.552

Abstract

This article presents transient numerical simulations of heat transfer occurring during sublimation growth of SiC single crystals via the Modified Lely Method, investigating the respective influence of radiative and convective contributions. We give a concise treatment of the radiation model including semi-transparency via the energy-band approach and we briefly describe the corresponding numerical methods. A complete documentation of the used material data is included.

Appeared in

  • Journal of Crystal Growth, 222 (2001), pp. 832-851

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