WIAS Preprint No. 443, (1998)

A Transient Model for the Sublimation Growth of Silicon Carbide Single Crystals


Authors

  • Bubner, Nikolaus
  • Klein, Olaf
    ORCID: 0000-0002-4142-3603
  • Philip, Peter
  • Sprekels, Jürgen
    ORCID: 0009-0000-0618-8604
  • Wilmánski, Krzysztof

2010 Mathematics Subject Classification

  • 80A20 65M99 80A15 65C20 35L65

Keywords

  • Modelling, sublimation growth, heat and mass transfer, numerical sublimation, conservation laws, partial differential equations

DOI

10.20347/WIAS.PREPRINT.443

Abstract

We present a transient model for the Modified Lely Method for the sublimation growth of SiC single crystals which consists of all conservation laws including reaction-diffusion equations. The model is based on a mixture theory for the gas phase. First numerical results illustrate the influence of the geometrical set-up inside the reactor on the evolution of the temperature distribution.

Appeared in

  • Journal of Crystal Growth Vol 205 (1999), pp 294-304

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