Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes
Authors
- Maltsi, Anieza
ORCID: 0000-0003-2417-8770 - Niermann, Tore
- Streckenbach, Timo
ORCID: 0009-0001-0874-0463 - Tabelow, Karsten
ORCID: 0000-0003-1274-9951 - Koprucki, Thomas
ORCID: 0000-0001-6235-9412
2010 Mathematics Subject Classification
- 34B60 74B10 78A45 81V65
Keywords
- Semiconductors, quantum dots, TEM images, electron wave propagation, strain
DOI
Abstract
We present a mathematical model and a tool chain for the numerical simulation of TEM images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the strain profile coupled with the Darwin-Howie-Whelan equations, describing the propagation of the electron wave through the sample. We perform a simulation study on indium gallium arsenide QDs with different shapes and compare the resulting TEM images to experimental ones. This tool chain can be applied to generate a database of simulated TEM images, which is a key element of a novel concept for model-based geometry reconstruction of semiconductor QDs, involving machine learning techniques.
Appeared in
- Opt. Quantum Electron., (2020), pp. 257/1--257/11 (published online on 05.05.2020), DOI 10.1007/s11082-020-02356-y .
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