WIAS Report No. 19, (2000)

Electro-reaction-diffusion system in heterostructures



Authors

  • Glitzky, Annegret
  • Hünlich, Rolf

2010 Mathematics Subject Classification

  • 35B40 35B45 35D05 35K45 35K57 78A35

Keywords

  • Reaction-diffusion systems, drift-diffusion processes, energy estimates, global estimates, existence, uniqueness, asymptotic behaviour, heterostructures, semiconductor devices

DOI

10.20347/WIAS.REPORT.19

Abstract

The paper is devoted to the mathematical investigation of a general class of electro-reaction-diffusion systems with nonsmooth data which arises in applications to semiconductor technology. Besides of a basic problem, a reduced problem is considered which is obtained if the kinetics of the free carriers is fast. For two dimensional domains we prove a global existence and uniqueness result. In addition, asymptotic properties of solutions are studied. Basic ideas are energy estimates, Moser iteration, regularization techniques and an existence result for electro-diffusion systems with weakly nonlinear volume and boundary source terms which is proved in the paper, too. The relationship between the property that the energy functional decays exponentially in time to its equilibrium value and the existence of global positive lower bounds for the densities of the species is investigated. We illustrate relations between the model and its reduced version in general and for concrete examples. Finally, we discuss the special features of heterostructures for simplified model problems.

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