WIAS Preprint No. 2317, (2016)

Gradient structure for optoelectronic models of semiconductors



Authors

  • Mielke, Alexander
    ORCID: 0000-0002-4583-3888
  • Peschka, Dirk
    ORCID: 0000-0002-3047-1140
  • Rotundo, Nella
  • Thomas, Marita

2010 Mathematics Subject Classification

  • 82D37 78A35 35K57 80A17

Keywords

  • Gradient flow, optoelectronic semiconductor model, dual dissipation potential, reaction-diffusion systems

Abstract

We derive an optoelectronic model based on a gradient formulation for the relaxation of electron-, hole- and photon- densities to their equilibrium state. This leads to a coupled system of partial and ordinary differential equations, for which we discuss the isothermal and the non-isothermal scenario separately

Appeared in

  • Quintela P. et al. (eds) Progress in Industrial Mathematics at ECMI 2016. ECMI 2016. Mathematics in Industry, vol 26. Springer, Cham, pp. 291-298, changed title: On some extension of energy-drift-diffusion models: Gradient structure for optoelectronic models of semiconductors.

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