WIAS Preprint No. 2296, (2016)

Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures



Authors

  • Kantner, Markus
  • Koprucki, Thomas
    ORCID: 0000-0001-6235-9412

2008 Physics and Astronomy Classification Scheme

  • 02.60.Cb, 47.11.Df, 72.20.-i

Keywords

  • cryogenic temperatures, drift-diffusion, transport, device simulation

DOI

10.20347/WIAS.PREPRINT.2296

Abstract

At cryogenic temperatures the electron-hole plasma in semiconductor materials becomes strongly degenerate, leading to very sharp internal layers, extreme depletion in intrinsic domains and strong nonlinear diffusion. As a result, the numerical simulation of the drift-diffusion system suffers from serious convergence issues using standard methods. We consider a one-dimensional p-i-n diode to illustrate these problems and present a simple temperature-embedding scheme to enable the numerical simulation at cryogenic temperatures. The method is suitable for forward-biased devices as they appear e.g. in optoelectronic applications.

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