WIAS Preprint No. 2292, (2016)

Modeling and efficient simulations of broad-area edge-emitting semiconductor lasers and amplifiers



Authors

  • Radziunas, Mindaugas

2010 Mathematics Subject Classification

  • 35Q60 65Y05 68W10 68W15 78-04

Keywords

  • Traveling wave model, numerical scheme, simulations, parallel computations, MPI, semiconductor device, broad area

DOI

10.20347/WIAS.PREPRINT.2292

Abstract

We present a (2+1)-dimensional partial differential equation model for spatial-lateral dynamics of edge-emitting broad-area semiconductor devices and several extensions of this model describing different physical effects. MPI-based parallelization of the resulting middlesize numerical problem is implemented and tested on the blade cluster and separate multi-core computers at the Weierstrass Institute in Berlin. It was found, that an application of 25-30 parallel processes on all considered platforms was guaranteeing a nearly optimal performance of the algorithm with the speedup around 20-25 and the efficiency of 0.7-0.8. It was also shown, that a simultaneous usage of several in-house available multi-core computers allows a further increase of the speedup without a significant loss of the efficiency. Finally, an importance of the considered problem and the efficient numerical simulations of this problem were illustrated by a few examples occurring in real world applications.

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