Time step truncation in direct simulation Monte Carlo for semiconductors
- Muscato, Orazio
- Wagner, Wolfgang
2010 Mathematics Subject Classification
- 82D37 65C05
- Boltzmann-Poisson equations, electronic devices, Monte Carlo simulations
A homogeneous (bulk) silicon semiconductor is studied by using the Direct Simulation Monte Carlo (DSMC). Two DSMC algorithms are considered, the self scattering technique (SST) and the constant time technique (CTT). First, the results obtained by CTT are shown to converge (with vanishing time step) to the results obtained by SST. The truncation error of CTT turns out to be of first order with respect to the time step. Second, the efficiency of both algorithms is compared. It is found that SST is more efficient if a high precision (relative error less then three percent) of the results is needed.
- Math. Comput. Modelling, 42 (2005) pp. 683-700.