WIAS Preprint No. 799, (2002)

Simulation of static and dynamic properties of edge-emitting multi quantum well lasers



Authors

  • Bandelow, Uwe
    ORCID: 0000-0003-3677-2347
  • Hünlich, Rolf
  • Koprucki, Thomas
    ORCID: 0000-0001-6235-9412

2010 Mathematics Subject Classification

  • 78A60 68U20

2008 Physics and Astronomy Classification Scheme

  • 42.55.Px 73.20.Dx 85.60.Bt 78.66.Fd

Keywords

  • semiconductor lasers, quantum wells, device simulation, multi section lasers

Abstract

This paper demonstrates simulation tools for edge-emitting multi quantum well (MQW) lasers. Properties of the strained MQW active region are simulated by eight-band kp calculations. Then, a 2D simulation along the transverse cross section of the device is performed based on a drift-diffusion model, which is self-consistently coupled to heat transport and equations for the optical field. Furthermore, a method is described, which allows for an efficient quasi 3D simulation of dynamic properties of multi-section edge-emitting lasers.

Appeared in

  • IEEE journal of selected topics in quantum electronics vol. 9, 2003, pp. 798 - 806

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