WIAS Preprint No. 659, (2001)

Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals



Authors

  • Klein, Olaf
    ORCID: 0000-0002-4142-3603
  • Philip, Peter

2010 Mathematics Subject Classification

  • 80A20 65M99 65Z05 35K55 78A55 78M25

2008 Physics and Astronomy Classification Scheme

  • 02.60.Cb 81.10.Bk 84.32.Hh 44.30.+v 44.90.+c

Keywords

  • numerical simulation, sublimation growth, physical vapor transport, modified Lely method, SiC single crystal, induction heating, heat transfer

Abstract

This article presents transient numerical simulations of the temperature evolution during sublimation growth of SiC single crystals via physical vapor transport (also called the modified Lely method) including diffusion and radiation, investigating the influence of induction heating. Using the imposed voltage as input data, the heat sources are computed via an axisymmetric complex-valued magnetic scalar potential that is determined as the solution of an elliptic PDE. The presented results include stationary simulations of magnetic potential distributions and resulting heat sources as well as transient simulations of the temperature evolution during the heating process. We examine the effects of imposed voltage (i.e. heating power), of different coil positions, and of a moving induction coil on the evolution of the global temperature field and on the temperature at the source, at the seed, and at the blind holes. All material data used are either included or referenced.

Appeared in

  • Journal of Crystal Growth, 247 (2003), pp. 219-235

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