WIAS Preprint No. 630, (2001)

Mathematical modeling and numerical simulation of semiconductor detectors



Authors

  • Gajewski, Herbert
  • Kaiser, Hans-Christoph
  • Langmach, Hartmut
  • Nürnberg, Reiner
  • Richter, Rainer H.

2010 Mathematics Subject Classification

  • 65M60 35K57 35B40 65M12

2008 Physics and Astronomy Classification Scheme

  • 85.60.Gz 07.85.Fv 95.55.Ka

Keywords

  • semiconductor device simulation, reaction-diffusion systems, asymptotic behavior, time and 3d-space discretization, software design, x-ray pixel detector, DEPFET, DEPMOS

Abstract

We report on a system of nonlinear partial differential equations describing signal conversion and amplification in semiconductor detectors. We explain the main ideas governing the numerical treatment of this system as they are implemented in our code WIAS-TeSCA. This software package has been used by the MPI Semiconductor Laboratory for numerical simulation of innovative radiation detectors. We present some simulation results focussing on three-dimensional effects in X-ray detectors for satellite missions.

Appeared in

  • Mathematics - Key Technology for the Future. Joint Projects Between Universities and Industry, W. Jaeger, H.-J. Krebs, eds., Springer-Verlag Berlin Heidelberg, 2003, pp. 355-364

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