WIAS Preprint No. 578, (2000)

Modelling and simulation of power devices for high-voltage integrated circuits



Authors

  • Hünlich, Rolf
  • Albinus, Günter
  • Gajewski, Herbert
  • Glitzky, Annegret
  • Röpke, Wilfried
  • Knopke, Jürgen

2010 Mathematics Subject Classification

  • 35B40 35B45 35K55 35K57 80A20 80A30 82D37

Keywords

  • Power devices, integrated circuits, process simulation, device simulation, drift-diffusion systems, reaction-diffusionsystems, heat flow equation, thermodynamic potentials, conservation laws, Lyapunov functions

DOI

10.20347/WIAS.PREPRINT.578

Abstract

Process and device simulators turned out to be important tools in the design of high-voltage integrated circuits and in the development of their technology. The main goal of this project was the improvement of the device simulator WIAS-TeSCA in order to simulate different power devices in high-voltage integrated circuits developed by the industrial partner. Some simulation results are presented. Furthermore, we discuss some aspects of the mathematics of relevant model equations which device and process simulations are based on.

Appeared in

  • Mathematics - Key Technolofy for the Future. Joint Projects Between Universities and Industry, W. Jaeger, H.-J. Krebs, eds., Springer-Verlag Berlin Heidelberg, 2003, pp. 401-411

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