WIAS Preprint No. 2660, (2019)

Unipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices



Authors

  • Fuhrmann, Jürgen
    ORCID: 0000-0003-4432-2434
  • Doan, Duy Hai
  • Glitzky, Annegret
  • Liero, Matthias
    ORCID: 0000-0002-0963-2915
  • Nika, Grigor

2010 Mathematics Subject Classification

  • 65M08 35J92 80M12 80A20

Keywords

  • Non-isothermal drift-diffusion, organic semiconductors, finite volumes, generalized Scharfetter--Gummel scheme, path following

DOI

10.20347/WIAS.PREPRINT.2660

Abstract

We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.

Appeared in

  • Proceedings of ``Finite Volumes for Complex Applications IX'', R. Klöfkorn, E. Keilegavlen, F.A. Radu, J. Fuhrmann, eds., vol. 323 of Springer Proceedings in Mathematics & Statistics, Springer, Cham, 2020, pp. 625--633, DOI 10.1007/978-3-030-43651-3_59 .

Download Documents