Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices
- Doan, Duy Hai
- Fischer, Axel
- Fuhrmann, Jürgen
- Glitzky, Annegret
- Liero, Matthias
2010 Mathematics Subject Classification
- 65M08 35J92 80M12 80A2
- Non-isothermal drift-diffusion, organic semiconductors, finite volumes, generalized Scharfetter-Gummel scheme, path following
We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
- J. Comput. Electron., 19 (2020), pp. 1164--1174, DOI 10.20347/WIAS.PREPRINT.2630 .