Scheme of a Ridge-Waveguide (RW) Strained Multi Quantum Well (SMQW) laser diode
(Design by Heinrich-Hertz-Institut für Nachrichtentechnik, Berlin)
The design of such state-of-the-art optoelectronic devices as semiconductor lasers is based on semiconductor nanostructures like Multi Quantum Wells. Precision electronic band structure calculations for the Quantum Well region turn out to be crucial for the prediction of the optical performance of Quantum Well lasers. Models for the optical behaviour of semiconductor lasers are based upon electronic structure information on different scales. We investigate the interaction of these scales in the corresponding mathematical models for the electronics of Multi Quantum Well structures.
Electronic states in semiconductor nanostructures and upscaling to semi-classical models (2004-2006)
Envelope Function Approximation of Electronic States in Semiconductor Nanostructures (2000-2002)
A. Arnold
H.-J. Flad, W. Hackbusch, D. Kolb, H. Luo
A. Jüngel
M. Baro
M. Ehrhardt, A. Zisowski