The operating principle of optoelectronic devices such as semiconductor lasers and electro-absorption modulators relies on quantum effects. However, semi-classical models proved to be very successful in the simulation of such devices, provided that the parameters entering the semi-classical models are properly chosen. The aim of this project is a comprehensive approach towards multi-scale optoelectronic device simulation that takes into account both the quantum mechanical and the semi-classical level of device simulation. Upscaling of quantum mechanical data to semi-classical parameters, such as the density of states, the optical peak gain, absorption spectra, and carrier lifetimes, closes the gap between the two levels of modeling. More precisely, the bandstructure of layered nano-scale semiconductor heterostructures is upscaled towards semi-classical state-equations. However, one has to take into account that several devices, e.g. electro-absorption modulators, operate in the biased mode. Thus, apart from confined states, extended states have to be regarded. Accordingly, on the quantum mechanical level, one operates with an effective multi-band kp-Schrödinger operator with confining and with quantum transmitting boundary conditions. Upscaling methods have to resolve not just single scalar parameters, but also the spectra of these parameters, in order to meet the growing stability and accuracy demands of semi-classical optoelectronic device simulation.
A. Arnold
H.-J. Flad, W. Hackbusch, D. Kolb, H. Luo
A. Jüngel
M. Baro
M. Ehrhardt, A. Zisowski