WIAS Preprint No. 2682, (2020)

Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes



Authors

  • Maltsi, Anieza
  • Niermann, Tore
  • Streckenbach, Timo
  • Tabelow, Karsten
    ORCID: 0000-0003-1274-9951
  • Koprucki, Thomas
    ORCID: 0000-0001-6235-9412

2010 Mathematics Subject Classification

  • 34B60 74B10 78A45 81V65

Keywords

  • Semiconductors, quantum dots, TEM images, electron wave propagation, strain

DOI

10.20347/WIAS.PREPRINT.2682

Abstract

We present a mathematical model and a tool chain for the numerical simulation of TEM images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the strain profile coupled with the Darwin-Howie-Whelan equations, describing the propagation of the electron wave through the sample. We perform a simulation study on indium gallium arsenide QDs with different shapes and compare the resulting TEM images to experimental ones. This tool chain can be applied to generate a database of simulated TEM images, which is a key element of a novel concept for model-based geometry reconstruction of semiconductor QDs, involving machine learning techniques.

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