WIAS Preprint No. 2857, (2021)

Spatially modulated broad-area lasers for narrow lateral far-field divergence


Authors

  • Zeghuzi, Anissa
  • Koester, Jan-Philipp
    ORCID: 0000-0001-6399-5306
  • Radziunas, Mindaugas
    ORCID: 0000-0003-0306-1266
  • Christopher, Heike
  • Wenzel, Hans
    ORCID: 0000-0003-1726-0223
  • Knigge, Andrea

2020 Mathematics Subject Classification

  • 78A60 78A45 35Q60 78-04 37M05

Keywords

  • High-power broad-area semiconductor lasers, traveling-wave model, spatial modulation of gain and index, lateral modes, far-field narrowing

DOI

10.20347/WIAS.PREPRINT.2857

Abstract

A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3-degree full width at half maximum where a 0.4-degree-wide main lobe contains 40% of the emitted optical output power. While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central one-degree angular range, the measured far-field intensity outside of the obtained central peak remains high.

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