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Reaction diffusion equations in heterostructures with application to semiconductor technology <--  Atomic force micrograph of a SiGe Heterojunction Bipolar Transistor (IHP Frankfurt (Oder))

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Head:	R. Hünlich
Team:	A. Glitzky, W. Röpke
Cooperation:	B. Heinemann (Institut für Halbleiterphysik Frankfurt (Oder)) K. Gröger N. Strecker
Term:	January 1994 - December 1996
Support:	BMBF   Mathematikprogramm 1994 - 1996  Grant GA7FVB

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Summary

In the project we made a contribution to the modelling and simulation of relevant process steps in the fabrication of modern nanoelectronic semiconductor devices. Mainly we dealt with questions arising at the Institute of Semiconductor Physics Frankfurt (Oder) - our project partner - during the development of SiGe Heterojunction Bipolar Transistors. We focussed our attention on problems concerning the diffusion of dopant atoms in pre-strained SiGe-layers as well as on the diffusion of electrically charged species in the case of high doping.
Our analytical and numerical investigations were devoted to various classes of electro reaction diffusion equations in heterostructures which model relevant processes in semiconductor technology at different levels. We found new results concerning existence, uniqueness and asymptotic behaviour of solutions. Moreover we discussed discrete versions of these equations, we proved the convergence of some numerical schemes, and we considered reductions of the model equations in some limit cases.

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Results

• WIAS Annual Reports   1997   1996   1995/1   1995/2   1994

• Final Report  WIAS Report 13  (try also TIB Hannover)

• Poster   1997    1995

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