WIAS Preprint No. 429, (1998)

On energy estimates for electro-diffusion equations arising in semiconductor technology



Authors

  • Glitzky, Annegret
    ORCID: 0000-0003-1995-5491
  • Hünlich, Rolf

2010 Mathematics Subject Classification

  • 35K57 78A35 35B40 35K45

Keywords

  • Reaction-diffusion systems, drift-diffusion processes, pair diffusion models, steady states, asymptotic behaviour

DOI

10.20347/WIAS.PREPRINT.429

Abstract

The design of modern semiconductor devices requires the numerical simulation of basic fabrication steps. We investigate some electro-reaction-diffusion equations which describe the redistribution of charged dopants and point defects in semiconductor structures and which the simulations should be based on. Especially, we are interested in pair diffusion models. We present new results concerned with the existence of steady states and with the asymptotic behaviour of solutions which are obtained by estimates of the corresponding free energy and dissipation functionals.

Appeared in

  • Research Notes in Mathematics vol. 406, 2000, pp.158-174

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